Fluctuations of an atomic ledge bordering a crystalline facet.

نویسندگان

  • Patrik L Ferrari
  • Michael Prähofer
  • Herbert Spohn
چکیده

When a high symmetry facet joins the rounded part of a crystal, the step line density vanishes as square root of r with r denoting the distance from the facet edge. This means that the ledge bordering the facet has a lot of space to meander as caused by thermal activation. We investigate the statistical properties of the border ledge fluctuations. In the scaling regime they turn out to be non-Gaussian and related to the edge statistics of Gaussian unitary ensemble multimatrix models.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Study of Dynamic Solid-Liquid Interfacial Phenomena in Hypereutectic Al-Si Alloy Using in situ HRTEM

Solid-liquid interfaces are extensively encountered in materials processing and applications. The structure and properties of these interfaces affect solidification, wetting behavior, and crystalline growth mechanisms, including epitaxial growth. The exact structural and chemical nature of these interfaces has been historically difficult to study at high resolution due to the fact that one phas...

متن کامل

In situ atomic-scale imaging of electrochemical lithiation in silicon.

In lithium-ion batteries, the electrochemical reaction between the electrodes and lithium is a critical process that controls the capacity, cyclability and reliability of the battery. Despite intensive study, the atomistic mechanism of the electrochemical reactions occurring in these solid-state electrodes remains unclear. Here, we show that in situ transmission electron microscopy can be used ...

متن کامل

Ultra-Sharpening of Diamond Stylus by 500 eV O+/O2 + Ion Beam Machining without Facet and Ripple Formation

The price of single point diamond tools with a sharp tip is very high due to complex machining process and highly expensive machining equipments. Yet, the performance is not quite satisfactory. In this paper, we have presented a very simple and cost effective machining process for the sharpening and polishing of diamond stylus using low energy reactive ion beam machining (RIBM). In our method, ...

متن کامل

Growth, defect formation, and morphology control of germanium-silicon semiconductor nanowire heterostructures.

By the virtue of the nature of the vapor-liquid-solid (VLS) growth process in semiconductor nanowires (NWs) and their small size, the nucleation, propagation, and termination of stacking defects in NWs are dramatically different from that in thin films. We demonstrate germanium-silicon axial NW heterostructure growth by the VLS method with 100% composition modulation and use these structures as...

متن کامل

Premelting at defects within bulk colloidal crystals.

Premelting is the localized loss of crystalline order at surfaces and defects at temperatures below the bulk melting transition. It can be thought of as the nucleation of the melting process. Premelting has been observed at the surfaces of crystals but not within. We report observations of premelting at grain boundaries and dislocations within bulk colloidal crystals using real-time video micro...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Physical review. E, Statistical, nonlinear, and soft matter physics

دوره 69 3 Pt 2  شماره 

صفحات  -

تاریخ انتشار 2004